Strain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloys

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dc.citation.articleNumber10en_US
dc.citation.journalTitlenpj 2D Materials and Applicationsen_US
dc.citation.volumeNumber2en_US
dc.contributor.authorTaghinejad, Hosseinen_US
dc.contributor.authorEftekhar, Ali A.en_US
dc.contributor.authorCampbell, Philip M.en_US
dc.contributor.authorBeatty, Brianen_US
dc.contributor.authorTaghinejad, Mohammaden_US
dc.contributor.authorZhou, Yaoen_US
dc.contributor.authorPerini, Christopher J.en_US
dc.contributor.authorMoradinejad, Hesamen_US
dc.contributor.authorHenderson, Walter E.en_US
dc.contributor.authorWoods, Eric V.en_US
dc.contributor.authorZhang, Xiangen_US
dc.contributor.authorAjayan, Pulickelen_US
dc.contributor.authorReed, Evan J.en_US
dc.contributor.authorVogel, Eric M.en_US
dc.contributor.authorAdibi, Alien_US
dc.date.accessioned2018-11-09T15:00:03Zen_US
dc.date.available2018-11-09T15:00:03Zen_US
dc.date.issued2018en_US
dc.description.abstractComposition modulation of two-dimensional transition-metal dichalcogenides (TMDs) has introduced an enticing prospect for the synthesis of Van der Waals alloys and lateral heterostructures with tunable optoelectronic properties. Phenomenologically, the optoelectronic properties of alloys are entangled to a strain that is intrinsic to synthesis processes. Here, we report an unprecedented biaxial strain that stems from the composition modulation of monolayer TMD alloys (e.g., MoS2xSe2(1 - x)) and inflicts fracture on the crystals. We find that the starting crystal (MoSe2) fails to adjust its lattice constant as the atoms of the host crystal (selenium) are replaced by foreign atoms (sulfur) during the alloying process. Thus, the resulting alloy forms a stretched lattice and experiences a large biaxial tensile strain. Our experiments show that the biaxial strain relaxes via formation of cracks in interior crystal domains or through less constraint bounds at the edge of the monolayer alloys. Griffith’s criterion suggests that defects combined with a sulfur-rich environment have the potential to significantly reduce the critical strain at which cracking occurs. Our calculations demonstrate a substantial reduction in fracture-inducing critical strain from 11% (in standard TMD crystals) to a range below 4% in as-synthesized alloys.en_US
dc.identifier.citationTaghinejad, Hossein, Eftekhar, Ali A., Campbell, Philip M., et al.. "Strain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloys." <i>npj 2D Materials and Applications,</i> 2, (2018) Springer Nature: https://doi.org/10.1038/s41699-018-0056-4.en_US
dc.identifier.digitals41699-018-0056-4en_US
dc.identifier.doihttps://doi.org/10.1038/s41699-018-0056-4en_US
dc.identifier.urihttps://hdl.handle.net/1911/103312en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleStrain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloysen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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