Methods of controllably forming bernal-stacked graphene layers
dc.contributor.assignee | Rice University | |
dc.contributor.publisher | United States Patent and Trademark Office | |
dc.creator | Tour, James M. | |
dc.creator | Sun, Zhengzong | |
dc.creator | Raji, Abdul-rahman O. | |
dc.date.accessioned | 2019-02-22T15:40:59Z | |
dc.date.available | 2019-02-22T15:40:59Z | |
dc.date.filed | 2013-12-12 | |
dc.date.issued | 2018-08-21 | |
dc.description.abstract | Methods of controllably forming Bernal-stacked graphene layers are disclosed. The methods comprise: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and (4) growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed Bernal-stacked graphene layers is controllable as a function of one or more growth parameters, such as a total pressure of the reaction chamber. Further embodiments of the present disclosure also include steps of: (5) terminating the growing step; and (6) transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. | |
dc.digitization.specifications | This patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes | |
dc.format.extent | 30 | |
dc.identifier.citation | Tour, James M., Sun, Zhengzong and Raji, Abdul-rahman O., "Methods of controllably forming bernal-stacked graphene layers." Patent US10053366B2. issued 2018-08-21. Retrieved from <a href="https://hdl.handle.net/1911/105161">https://hdl.handle.net/1911/105161</a>. | |
dc.identifier.patentID | US10053366B2 | |
dc.identifier.uri | https://hdl.handle.net/1911/105161 | |
dc.language.iso | eng | |
dc.title | Methods of controllably forming bernal-stacked graphene layers | |
dc.type | Utility patent | |
dc.type.dcmi | Text | |
dc.type.genre | patents |
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