Fourier transform infrared spectroscopy of 6.1-Angstrom semiconductor quantum wells

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dc.contributor.advisorKono, Junichiroen_US
dc.creatorTang, Junen_US
dc.date.accessioned2009-06-04T07:00:53Zen_US
dc.date.available2009-06-04T07:00:53Zen_US
dc.date.issued2002en_US
dc.description.abstractThe 6.1-Angstrom (A) family of III-V semiconductors---InAs, GaSb, and AlSb and their alloys and heterostructures---has unique properties that may find application in next generation multi-functional semiconductor devices. In this project, we investigate intersubband transitions in 6.1-A quantum wells. The short-term objective is to explore high-photon-energy (or short-wavelength) intersubband transitions that are expected to occur in these systems due to their extremely large conduction-band offsets. The ultimate goal of this project is to construct a solid-state terahertz (THz) emitter based on 6.1-A quantum wells under intersubband pumping. We have established reliable and reproducible sample preparation methods for measuring intersubband transitions using Fourier-transform infrared spectroscopy. In particular, we observed intersubband transitions in 6.1-A quantum wells in a previously unexplored short-wavelength range. We systematically studied intersubband transition energies, intensities, and linewidths as functions of well width and temperature, and compared the results with calculations based on an 8-band k·p theory. Experimental methods, experimental results, and discussion will be presented in detail. Furthermore, transmission electron microscopy (TEM) was used to assess the quality of interfaces in 6.1-A quantum wells. A description is given for the sample preparation procedure together with some TEM pictures.en_US
dc.format.extent77 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS E.E. 2002 TANGen_US
dc.identifier.citationTang, Jun. "Fourier transform infrared spectroscopy of 6.1-Angstrom semiconductor quantum wells." (2002) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/17554">https://hdl.handle.net/1911/17554</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/17554en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectElectronicsen_US
dc.subjectElectrical engineeringen_US
dc.subjectCondensed matter physicsen_US
dc.subjectOpticsen_US
dc.titleFourier transform infrared spectroscopy of 6.1-Angstrom semiconductor quantum wellsen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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