Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi

Abstract

Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors. Although phononic and electronic transport underpin the physical origin of thermoelectrics, vacancy has only played a stereotyped role as a scattering center. Here we reveal the multifunctionality of vacancy in tailoring the transport properties of an emerging thermoelectric material, defective n-type ZrNiBi. The phonon kinetic process is mediated in both propagating velocity and relaxation time: vacancy-induced local soft bonds lower the phonon velocity while acoustic-optical phonon coupling, anisotropic vibrations, and point-defect scattering induced by vacancy shorten the relaxation time. Consequently, defective ZrNiBi exhibits the lowest lattice thermal conductivity among the half-Heusler family. In addition, a vacancy-induced flat band features prominently in its electronic band structure, which is not only desirable for electron-sufficient thermoelectric materials but also interesting for driving other novel physical phenomena. Finally, better thermoelectric performance is established in a ZrNiBi-based compound. Our findings not only demonstrate a promising thermoelectric material but also promote the fascinating vacancy-mediated anomalous transport properties for multidisciplinary explorations.

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Ren, W., Xue, W., Guo, S., He, R., Deng, L., Song, S., Sotnikov, A., Nielsch, K., van den Brink, J., Gao, G., Chen, S., Han, Y., Wu, J., Chu, C.-W., Wang, Z., Wang, Y., & Ren, Z. (2023). Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi. Nature Communications, 14(1), 4722. https://doi.org/10.1038/s41467-023-40492-7

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