Laser ionization studies of supersonic semiconductor clusters

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dc.contributor.advisorTittel, Frank K.
dc.contributor.committeeMemberCurl, Robert F.
dc.contributor.committeeMemberWilson, William L.
dc.creatorLiu, Yuan
dc.date.accessioned2018-12-18T21:25:14Z
dc.date.available2018-12-18T21:25:14Z
dc.date.issued1985
dc.description.abstractCold silicon and germanium clusters have been produced in a supersonic molecular beam by laser vaporization of a silicon or germanium rod. The cluster beam is characterized by laser ionization studies and time of flight mass analysis. Both large Si and Ge clusters are found to have similar fragmentation patterns. They fisson into stable subunits rather than lose atoms sequentially. Two-color stepwise ionization experiments reveal that large Si and Ge clusters have an intermediate state with a lifetime of approximately 1 ns, thereby establishing the feasibility of resonant two photon ionization (R2PI) spectroscopy on these clusters.
dc.format.digitalOriginreformatted digital
dc.format.extent61 pp
dc.identifier.callnoTHESIS E.E. 1985 LIU
dc.identifier.citationLiu, Yuan. "Laser ionization studies of supersonic semiconductor clusters." (1985) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/104546">https://hdl.handle.net/1911/104546</a>.
dc.identifier.digitalRICE2181
dc.identifier.urihttps://hdl.handle.net/1911/104546
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.titleLaser ionization studies of supersonic semiconductor clusters
dc.typeThesis
dc.type.materialText
thesis.degree.departmentElectrical Engineering
thesis.degree.disciplineEngineering
thesis.degree.grantorRice University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science
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