Laser ionization studies of supersonic semiconductor clusters

Date
1985
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract

Cold silicon and germanium clusters have been produced in a supersonic molecular beam by laser vaporization of a silicon or germanium rod. The cluster beam is characterized by laser ionization studies and time of flight mass analysis. Both large Si and Ge clusters are found to have similar fragmentation patterns. They fisson into stable subunits rather than lose atoms sequentially. Two-color stepwise ionization experiments reveal that large Si and Ge clusters have an intermediate state with a lifetime of approximately 1 ns, thereby establishing the feasibility of resonant two photon ionization (R2PI) spectroscopy on these clusters.

Description
Degree
Master of Science
Type
Thesis
Keywords
Citation

Liu, Yuan. "Laser ionization studies of supersonic semiconductor clusters." (1985) Master’s Thesis, Rice University. https://hdl.handle.net/1911/104546.

Has part(s)
Forms part of
Published Version
Rights
Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
Link to license
Citable link to this page