Plasma Treatment Technologies for GaN Electronics

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dc.citation.articleNumber4343en_US
dc.citation.issueNumber22en_US
dc.citation.journalTitleElectronicsen_US
dc.citation.volumeNumber13en_US
dc.contributor.authorLi, Botongen_US
dc.contributor.authorRahaman, Imteazen_US
dc.contributor.authorEllis, Hunter D.en_US
dc.contributor.authorFu, Houqiangen_US
dc.contributor.authorZhao, Yujien_US
dc.contributor.authorCai, Yongen_US
dc.contributor.authorZhang, Baoshunen_US
dc.contributor.authorFu, Kaien_US
dc.date.accessioned2025-01-09T20:17:01Zen_US
dc.date.available2025-01-09T20:17:01Zen_US
dc.date.issued2024en_US
dc.description.abstractNowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce emissions. However, with the progress in the development of GaN electronics, surface and interface defects have become a main problem that limits the further promotion of their performance and stability, increasing leakage current and causing degradation in breakdown voltage. Thus, to reduce the damage, Plasma treatment technologies are introduced in the fabrication process of GaN electronics. Up to now, designs like the high-resistivity p-GaN cap Layer, passivating termination, and surface recovery process have been established via Plasma treatment, reaching the goals of normally-off transistors, diodes with high breakdown voltage and high-reliability GaN electronics, etc. In this article, hydrogen, fluorine, oxygen, and nitrogen Plasma treatment technologies will be discussed, and their application in GaN electronics will be reviewed and compared.en_US
dc.identifier.citationLi, B., Rahaman, I., Ellis, H. D., Fu, H., Zhao, Y., Cai, Y., Zhang, B., & Fu, K. (2024). Plasma Treatment Technologies for GaN Electronics. Electronics, 13(22), Article 22. https://doi.org/10.3390/electronics13224343en_US
dc.identifier.digitalelectronics-13-04343en_US
dc.identifier.doihttps://doi.org/10.3390/electronics13224343en_US
dc.identifier.urihttps://hdl.handle.net/1911/118126en_US
dc.language.isoengen_US
dc.publisherMDPIen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license. Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.subject.keywordGaNen_US
dc.subject.keywordPlasma treatmenten_US
dc.subject.keywordpower electronicsen_US
dc.subject.keywordsensoren_US
dc.titlePlasma Treatment Technologies for GaN Electronicsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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