Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorBarron, Andrew R.en_US
dc.creatorWhitsitt, Elizabeth Anneen_US
dc.date.accessioned2015-05-04T19:06:01Z
dc.date.available2015-05-04T19:06:01Z
dc.date.filed2010-03-31en_US
dc.date.issued2012-06-19en_US
dc.description.abstractThe present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes.en_US
dc.format.extent8 ppen_US
dc.identifier.citationBarron, Andrew R. and Whitsitt, Elizabeth Anne, "Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth." Patent US8201517B2. issued 2012-06-19. Retrieved from https://hdl.handle.net/1911/80096.
dc.identifier.patentIDUS8201517B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/80096
dc.language.isoengen_US
dc.titleMethod for low temperature growth of inorganic materials from solution using catalyzed growth and re-growthen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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