Cavity-enhanced telecom atomic source in silicon

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dc.contributor.advisorChen, Songtaoen_US
dc.creatorFelix Rendon, Ulisesen_US
dc.date.accessioned2024-08-30T16:27:43Zen_US
dc.date.available2024-08-30T16:27:43Zen_US
dc.date.created2024-08en_US
dc.date.issued2024-07-31en_US
dc.date.submittedAugust 2024en_US
dc.date.updated2024-08-30T16:27:43Zen_US
dc.description.abstractQuantum networks represent one of the most promising technologies for the future development of quantum information science (QIS), with broad applications that range from secure communication and distributed quantum computing to enhanced sensing. Solid-state platforms are ideal candidates for the implementation of such quantum networks, since they offer easy accessibility to device integration and spin-photon interfaces capable of processing and storing qubits, as well as connecting remote network nodes by sending photons through optical fibers. In this thesis, we focus on single T centers, which are a novel type of color centers in silicon. This quantum defect stands out as a promising candidate for quantum networking applications due to its telecom optical transition, superior spin performance, and its compatibility with the technologically mature silicon platform. Here, we present our initial studies on single T centers, including the design and fabrication of nanophotonic devices in a silicon-on-insulator (SOI) sample with integrated T centers, and the cavity-enhanced fluorescence emission of single T centers, which have achieved the highest Purcell factor (Pt = 43) to date. Moreover, our experimental and numerical results allow us to determine a lower bound to the T center quantum efficiency of η = 23.4%, which is a key optical parameter for T centers that is largely overlooked in the community. Additionally, we present preliminary bulk spectroscopy work on ensemble T centers. The same setup will be exploited towards the exploration of novel quantum defects in silicon, including the boron-carbon (B-C) complex defect and the Ti+ defect, which are expected to have similar or better optical properties than the T center.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationFelix Rendon, Ulises. Cavity-enhanced telecom atomic source in silicon. (2024). Masters thesis, Rice University. https://hdl.handle.net/1911/117789en_US
dc.identifier.urihttps://hdl.handle.net/1911/117789en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectT centeren_US
dc.subjectsiliconen_US
dc.subjectquantum defecten_US
dc.subjectquantum networken_US
dc.subjectPurcellen_US
dc.titleCavity-enhanced telecom atomic source in siliconen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentApplied Physicsen_US
thesis.degree.disciplineApplied Physics/Electrical Eng, Applied Physics/Electrical Engen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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