Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers

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dc.citation.articleNumber39465
dc.citation.journalTitleScientific Reportsen_US
dc.citation.volumeNumber6en_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorLei, Sidongen_US
dc.contributor.authorBurke, Robert A.en_US
dc.contributor.authorNichols, Barbara M.en_US
dc.contributor.authorGeorge, Antonyen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorFranklin, Aaron D.en_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorDubey, Madanen_US
dc.date.accessioned2017-01-30T17:29:31Z
dc.date.available2017-01-30T17:29:31Z
dc.date.issued2016en_US
dc.description.abstractThe interfaces in devices made of two-dimensional materials such as MoS2 can effectively control their optoelectronic performance. However, the extent and nature of these deterministic interactions are not fully understood. Here, we investigate the role of substrate interfaces on the photodetector properties of MoS2 devices by studying its photocurrent properties on both SiO2 and self-assembled monolayer-modified substrates. Results indicate that while the photoresponsivity of the devices can be enhanced through control of device interfaces, response times are moderately compromised. We attribute this trade-off to the changes in the electrical contact resistance at the device metal-semiconductor interface. We demonstrate that the formation of charge carrier traps at the interface can dominate the device photoresponse properties. The capture and emission rates of deeply trapped charge carriers in the substrate-semiconductor-metal regions are strongly influenced by exposure to light and can dynamically dope the contact regions and thus perturb the photodetector properties. As a result, interface-modified photodetectors have significantly lower dark-currents and higher on-currents. Through appropriate interfacial design, a record high device responsivity of 4.5 × 103 A/W at 7 V is achieved, indicative of the large signal gain in the devices and exemplifying an important design strategy that enables highly responsive two-dimensional photodetectors.en_US
dc.identifier.citationNajmaei, Sina, Lei, Sidong, Burke, Robert A., et al.. "Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers." <i>Scientific Reports,</i> 6, (2016) Springer Nature: http://dx.doi.org/10.1038/srep39465.
dc.identifier.doihttp://dx.doi.org/10.1038/srep39465en_US
dc.identifier.urihttps://hdl.handle.net/1911/93810
dc.language.isoengen_US
dc.publisherSpringer Nature
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material.en_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en_US
dc.titleEnabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layersen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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