Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2heterostructures

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dc.citation.articleNumber041402(R)en_US
dc.citation.issueNumber4en_US
dc.citation.journalTitlePhysical Review Ben_US
dc.citation.volumeNumber98en_US
dc.contributor.authorTang, Chenweien_US
dc.contributor.authorHe, Zheen_US
dc.contributor.authorChen, Weibingen_US
dc.contributor.authorJia, Shuaien_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorVoronine, Dmitri V.en_US
dc.date.accessioned2018-11-01T14:28:10Zen_US
dc.date.available2018-11-01T14:28:10Zen_US
dc.date.issued2018en_US
dc.description.abstractLateral two-dimensional (2D) transition-metal dichalcogenide (TMD) heterostructures have recently attracted wide attention as promising materials for optoelectronic nanodevices. Due to the nanoscale width of lateral heterojunctions, the study of their optical properties is challenging and requires using subwavelength optical characterization techniques. We investigated the photoresponse of a lateral 2D WSe2/MoSe2 heterostructure using tip-enhanced photoluminescence (TEPL) with nanoscale spatial resolution and with picoscale tip-sample distance dependence. We demonstrate the observation of quantum plasmonic effects in 2D heterostructures on a nonmetallic substrate, and we report the nano-optical measurements of the lateral 2D TMD heterojunction width of ∼150 nm and the charge tunneling distance of ∼20 pm. Controlling the plasmonic tip location allows for both nano-optical imaging and plasmon-induced hot-electron injection into the heterostructure. By adjusting the tip-sample distance, we demonstrated the controllability of the hot-electron injection via the competition of two quantum plasmonic photoluminescence (PL) enhancement and quenching mechanisms. The directional charge transport in the depletion region leads to the increased hot-electron injection, enhancing the MoSe2 PL signal. The properties of the directional hot-electron injection in the quantum plasmonic regime make the lateral 2D MoSe2/WSe2 heterostructures promising for quantum nanodevices with tunable photoresponse.en_US
dc.identifier.citationTang, Chenwei, He, Zhe, Chen, Weibing, et al.. "Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2heterostructures." <i>Physical Review B,</i> 98, no. 4 (2018) American Physical Society: https://doi.org/10.1103/PhysRevB.98.041402.en_US
dc.identifier.digitalPhysRevB.98.041402en_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.98.041402en_US
dc.identifier.urihttps://hdl.handle.net/1911/103267en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleQuantum plasmonic hot-electron injection in lateral WSe2/MoSe2heterostructuresen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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