Porous SiOx materials for improvement in SiOx switching device performances

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dc.contributor.assigneeRice University
dc.contributor.publisherUnited States Patent and Trademark Office
dc.creatorTour, James M.
dc.creatorWang, Gunuk
dc.creatorYang, Yang
dc.creatorJi, Yongsung
dc.date.accessioned2018-08-23T18:27:56Z
dc.date.available2018-08-23T18:27:56Z
dc.date.filed2014-11-19
dc.date.issued2018-06-12
dc.description.abstractA porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiOx) positioned between the electrodes. The memory material layer may provide a nanoporous structure. In some embodiments, the nanoporous structure may be formed electrochemically, such as from anodic etching. Electroformation of a filament through the memory material layer may occur internally through the layer rather than at an edge at extremely low electro-forming voltages. The porous memory device may also provide multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption.
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes
dc.format.extent27
dc.identifier.citationTour, James M., Wang, Gunuk, Yang, Yang and Ji, Yongsung, "Porous SiOx materials for improvement in SiOx switching device performances." Patent US9997705B2. issued 2018-06-12. Retrieved from <a href="https://hdl.handle.net/1911/102490">https://hdl.handle.net/1911/102490</a>.
dc.identifier.patentIDUS9997705B2
dc.identifier.urihttps://hdl.handle.net/1911/102490
dc.language.isoeng
dc.titlePorous SiOx materials for improvement in SiOx switching device performances
dc.typeUtility patent
dc.type.dcmiText
dc.type.genrepatents
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