Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment

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dc.citation.articleNumber505705
dc.citation.issueNumber50
dc.citation.journalTitleNanotechnology
dc.citation.volumeNumber31
dc.contributor.authorBarnett, Chris J.
dc.contributor.authorNavarro-Torres, Jorge
dc.contributor.authorMcGettrick, James D.
dc.contributor.authorMaffeis, Thierry G.G.
dc.contributor.authorBarron, Andrew R.
dc.date.accessioned2020-10-30T18:49:10Z
dc.date.available2020-10-30T18:49:10Z
dc.date.issued2020
dc.description.abstractMetal oxide semiconductors such as ZnO have attracted much scientific attention due their material and electrical properties and their ability to form nanostructures that can be used in numerous devices. However, ZnO is naturally n-type and tailoring its electrical properties towards intrinsic or p-type in order to optimise device operation have proved difficult. Here, we present an x-ray photon-electron spectroscopy and photoluminescence study of ZnO nanowires that have been treated with different argon bombardment treatments including with monoatomic beams and cluster beams of 500 atoms and 2000 atoms with acceleration volte of 0.5 keV–20 keV. We observed that argon bombardment can remove surface contamination which will improve contact resistance and consistency. We also observed that using higher intensity argon bombardment stripped the surface for nanowires causing a reduction in defects and surface OH– groups both of which are possible causes of the n-type nature and observed a shift in the valance band edge suggest a shift to a more p-type nature. These results indicate a simple method for tailoring the electrical characteristic of ZnO.
dc.identifier.citationBarnett, Chris J., Navarro-Torres, Jorge, McGettrick, James D., et al.. "Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment." <i>Nanotechnology,</i> 31, no. 50 (2020) IOP: https://doi.org/10.1088/1361-6528/abb5d1.
dc.identifier.doihttps://doi.org/10.1088/1361-6528/abb5d1
dc.identifier.urihttps://hdl.handle.net/1911/109460
dc.language.isoeng
dc.publisherIOP
dc.rightsOriginal content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleInducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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