Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage

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dc.citation.firstpage6009
dc.citation.issueNumber9
dc.citation.journalTitleNano Letters
dc.citation.lastpage6014
dc.citation.volumeNumber15
dc.contributor.authorWang, Gunuk
dc.contributor.authorLee, Jae-Hwang
dc.contributor.authorYang, Yang
dc.contributor.authorRuan, Gedeng
dc.contributor.authorKim, Nam Dong
dc.contributor.authorJi, Yongsung
dc.contributor.authorTour, James M.
dc.contributor.orgRichard E. Smalley Institute of Nanoscale Science and Technology
dc.date.accessioned2016-04-04T21:23:36Z
dc.date.available2016-04-04T21:23:36Z
dc.date.issued2015
dc.description.abstractOxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.
dc.identifier.citationWang, Gunuk, Lee, Jae-Hwang, Yang, Yang, et al.. "Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage." <i>Nano Letters,</i> 15, no. 9 (2015) American Chemical Society: 6009-6014. http://dx.doi.org/10.1021/acs.nanolett.5b02190.
dc.identifier.doihttp://dx.doi.org/10.1021/acs.nanolett.5b02190
dc.identifier.urihttps://hdl.handle.net/1911/88845
dc.language.isoeng
dc.publisherAmerican Chemical Society
dc.rightsThis is an open access article published under an ACS AuthorChoiceﾠLicense, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
dc.rights.urihttp://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.subject.keywordnanoporous
dc.subject.keywordTa2O5?x
dc.subject.keywordnonvolatile memory
dc.subject.keywordresistive memory
dc.subject.keywordtantalum oxide
dc.titleThree-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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