Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorTour, James M.en_US
dc.creatorYao, Junen_US
dc.creatorNatelson, Douglasen_US
dc.creatorZhong, Linen_US
dc.creatorHe, Taoen_US
dc.date.accessioned2015-05-04T19:06:05Z
dc.date.available2015-05-04T19:06:05Z
dc.date.filed2010-08-02en_US
dc.date.issued2013-11-26en_US
dc.description.abstractIn various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes.en_US
dc.format.extent25 ppen_US
dc.identifier.citationTour, James M., Yao, Jun, Natelson, Douglas, Zhong, Lin and He, Tao, "Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof." Patent US8592791B2. issued 2013-11-26. Retrieved from https://hdl.handle.net/1911/80142.
dc.identifier.patentIDUS8592791B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/80142
dc.language.isoengen_US
dc.titleElectronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereofen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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