A method is described which utilizes the difference in vapor pressure between C\sb60 and heavier fullerenes to produce C\sb60 powder with a purity of 99.97%. Using the material from this process allows for the growth of high purity polycrystalline C\sb60 thin films. These films are characterized using Raman spectroscopy and temperature dependent photoluminescence. The temperature dependence of the photoluminescence spectra indicates that both intermolecular and intramolecular processes are involved in the radiative recombination of the excited states. A model is proposed to describe the temperature dependence of the photoluminescence. A possible interpretation of this model is that there is a barrier to the formation of self trapped excitons.