Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorZheng, Bob Yien_US
dc.creatorWang, Yuminen_US
dc.creatorHalas, Nancy J.en_US
dc.creatorNordlander, Peteren_US
dc.date.accessioned2017-12-14T19:13:18Zen_US
dc.date.available2017-12-14T19:13:18Zen_US
dc.date.filed2015-04-30en_US
dc.date.issued2017-10-31en_US
dc.description.abstractA metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposesen_US
dc.format.extent12en_US
dc.identifier.citationZheng, Bob Yi, Wang, Yumin, Halas, Nancy J. and Nordlander, Peter, "Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain." Patent US9806217B2. issued 2017-10-31. Retrieved from <a href="https://hdl.handle.net/1911/98879">https://hdl.handle.net/1911/98879</a>.en_US
dc.identifier.patentIDUS9806217B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/98879en_US
dc.language.isoengen_US
dc.titleFully integrated CMOS-compatible photodetector with color selectivity and intrinsic gainen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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