Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain

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dc.contributor.assigneeRice University
dc.contributor.publisherUnited States Patent and Trademark Office
dc.creatorZheng, Bob Yi
dc.creatorWang, Yumin
dc.creatorHalas, Nancy J.
dc.creatorNordlander, Peter
dc.date.accessioned2017-12-14T19:13:18Z
dc.date.available2017-12-14T19:13:18Z
dc.date.filed2015-04-30
dc.date.issued2017-10-31
dc.description.abstractA metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes
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dc.identifier.citationZheng, Bob Yi, Wang, Yumin, Halas, Nancy J. and Nordlander, Peter, "Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain." Patent US9806217B2. issued 2017-10-31. Retrieved from <a href="https://hdl.handle.net/1911/98879">https://hdl.handle.net/1911/98879</a>.
dc.identifier.patentIDUS9806217B2
dc.identifier.urihttps://hdl.handle.net/1911/98879
dc.language.isoeng
dc.titleFully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain
dc.typeUtility patent
dc.type.dcmiText
dc.type.genrepatents
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