Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

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dc.citation.articleNumber645en_US
dc.citation.issueNumber6en_US
dc.citation.journalTitleElectronicsen_US
dc.citation.volumeNumber8en_US
dc.contributor.authorPatil, Prasanna D.en_US
dc.contributor.authorGhosh, Sujoyen_US
dc.contributor.authorWasala, Milindaen_US
dc.contributor.authorLei, Sidongen_US
dc.contributor.authorVajtai, Roberten_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorTalapatra, Saikaten_US
dc.date.accessioned2019-11-22T16:19:54Zen_US
dc.date.available2019-11-22T16:19:54Zen_US
dc.date.issued2019en_US
dc.description.abstractInnovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.en_US
dc.identifier.citationPatil, Prasanna D., Ghosh, Sujoy, Wasala, Milinda, et al.. "Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)." <i>Electronics,</i> 8, no. 6 (2019) MDPI: https://doi.org/10.3390/electronics8060645.en_US
dc.identifier.digitalelectronics-08-00645en_US
dc.identifier.doihttps://doi.org/10.3390/electronics8060645en_US
dc.identifier.urihttps://hdl.handle.net/1911/107713en_US
dc.language.isoengen_US
dc.publisherMDPIen_US
dc.rightsThis is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly citeden_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.subject.keyword2D materialsen_US
dc.subject.keywordcopper indium selenideen_US
dc.subject.keywordfield-effect transistorsen_US
dc.subject.keywordelectric double layeren_US
dc.subject.keywordEDL-FETen_US
dc.subject.keywordionic liquiden_US
dc.subject.keywordBMIM-PF6en_US
dc.titleElectric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)en_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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