Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu–Ni Alloy

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dc.citation.journalTitleAdvanced Scienceen_US
dc.contributor.authorLu, Guangyuanen_US
dc.contributor.authorWu, Tianruen_US
dc.contributor.authorYang, Pengen_US
dc.contributor.authorYang, Yingchaoen_US
dc.contributor.authorJin, Zehuaen_US
dc.contributor.authorChen, Weibingen_US
dc.contributor.authorJia, Shuaien_US
dc.contributor.authorWang, Haominen_US
dc.contributor.authorZhang, Guanhuaen_US
dc.contributor.authorSun, Julongen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorXie, Xiaomingen_US
dc.contributor.authorJiang, Mianhengen_US
dc.date.accessioned2017-05-23T19:32:18Zen_US
dc.date.available2017-05-23T19:32:18Zen_US
dc.date.issued2017en_US
dc.description.abstractGraphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.en_US
dc.identifier.citationLu, Guangyuan, Wu, Tianru, Yang, Peng, et al.. "Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu–Ni Alloy." <i>Advanced Science,</i> (2017) Wiley: https://doi.org/10.1002/advs.201700076.en_US
dc.identifier.doihttps://doi.org/10.1002/advs.201700076en_US
dc.identifier.urihttps://hdl.handle.net/1911/94358en_US
dc.language.isoengen_US
dc.publisherWileyen_US
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleSynthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu–Ni Alloyen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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