Growth of graphene films from non-gaseous carbon sources

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorTour, Jamesen_US
dc.creatorSun, Zhengzongen_US
dc.creatorYan, Zhengen_US
dc.creatorRuan, Gedengen_US
dc.creatorPeng, Zhiweien_US
dc.date.accessioned2015-09-09T20:02:46Zen_US
dc.date.available2015-09-09T20:02:46Zen_US
dc.date.filed2012-07-30en_US
dc.date.issued2015-08-04en_US
dc.description.abstractIn various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposesen_US
dc.format.extent32en_US
dc.identifier.citationTour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng and Peng, Zhiwei, "Growth of graphene films from non-gaseous carbon sources." Patent US9096437B2. issued 2015-08-04. Retrieved from <a href="https://hdl.handle.net/1911/81636">https://hdl.handle.net/1911/81636</a>.en_US
dc.identifier.patentIDUS9096437B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/81636en_US
dc.language.isoengen_US
dc.titleGrowth of graphene films from non-gaseous carbon sourcesen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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