Fluorinated h-BN as a magnetic semiconductor

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dc.citation.articleNumbere1700842en_US
dc.citation.issueNumber7en_US
dc.citation.journalTitleScience Advancesen_US
dc.citation.volumeNumber3en_US
dc.contributor.authorRadhakrishnan, Sruthien_US
dc.contributor.authorDas, Deyaen_US
dc.contributor.authorSamanta, Atanuen_US
dc.contributor.authorde los Reyes, Carlos A.en_US
dc.contributor.authorDeng, Liangzien_US
dc.contributor.authorAlemany, Lawrence B.en_US
dc.contributor.authorWeldeghiorghis, Thomas K.en_US
dc.contributor.authorKhabashesku, Valery N.en_US
dc.contributor.authorKochat, Vidyaen_US
dc.contributor.authorJin, Zehuaen_US
dc.contributor.authorSudeep, Parambath M.en_US
dc.contributor.authorMartí, Angel A.en_US
dc.contributor.authorChu, Ching-Wuen_US
dc.contributor.authorRoy, Ajiten_US
dc.contributor.authorTiwary, Chandra Sekharen_US
dc.contributor.authorSingh, Abhishek K.en_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.date.accessioned2017-10-19T17:11:53Zen_US
dc.date.available2017-10-19T17:11:53Zen_US
dc.date.issued2017en_US
dc.description.abstractWe report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.en_US
dc.identifier.citationRadhakrishnan, Sruthi, Das, Deya, Samanta, Atanu, et al.. "Fluorinated h-BN as a magnetic semiconductor." <i>Science Advances,</i> 3, no. 7 (2017) American Association for the Advancement of Science: https://doi.org/10.1126/sciadv.1700842.en_US
dc.identifier.digitalFluorinated_h-BN_magnetic_semiconductoren_US
dc.identifier.doihttps://doi.org/10.1126/sciadv.1700842en_US
dc.identifier.urihttps://hdl.handle.net/1911/97799en_US
dc.language.isoengen_US
dc.publisherAmerican Association for the Advancement of Scienceen_US
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.en_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/en_US
dc.titleFluorinated h-BN as a magnetic semiconductoren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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