Fluorinated h-BN as a magnetic semiconductor

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dc.citation.articleNumbere1700842
dc.citation.issueNumber7
dc.citation.journalTitleScience Advances
dc.citation.volumeNumber3
dc.contributor.authorRadhakrishnan, Sruthi
dc.contributor.authorDas, Deya
dc.contributor.authorSamanta, Atanu
dc.contributor.authorde los Reyes, Carlos A.
dc.contributor.authorDeng, Liangzi
dc.contributor.authorAlemany, Lawrence B.
dc.contributor.authorWeldeghiorghis, Thomas K.
dc.contributor.authorKhabashesku, Valery N.
dc.contributor.authorKochat, Vidya
dc.contributor.authorJin, Zehua
dc.contributor.authorSudeep, Parambath M.
dc.contributor.authorMartí, Angel A.
dc.contributor.authorChu, Ching-Wu
dc.contributor.authorRoy, Ajit
dc.contributor.authorTiwary, Chandra Sekhar
dc.contributor.authorSingh, Abhishek K.
dc.contributor.authorAjayan, Pulickel M.
dc.date.accessioned2017-10-19T17:11:53Z
dc.date.available2017-10-19T17:11:53Z
dc.date.issued2017
dc.description.abstractWe report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
dc.identifier.citationRadhakrishnan, Sruthi, Das, Deya, Samanta, Atanu, et al.. "Fluorinated h-BN as a magnetic semiconductor." <i>Science Advances,</i> 3, no. 7 (2017) American Association for the Advancement of Science: https://doi.org/10.1126/sciadv.1700842.
dc.identifier.digitalFluorinated_h-BN_magnetic_semiconductor
dc.identifier.doihttps://doi.org/10.1126/sciadv.1700842
dc.identifier.urihttps://hdl.handle.net/1911/97799
dc.language.isoeng
dc.publisherAmerican Association for the Advancement of Science
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/
dc.titleFluorinated h-BN as a magnetic semiconductor
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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