Aluminum Nitride Memristors: The Fabrication and Analysis of a Next Generation Processor

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dc.contributor.advisorSpanos, Pol Den_US
dc.contributor.advisorGhorbel, Fathien_US
dc.contributor.advisorTang, Mingen_US
dc.creatorAttarwala, Alien_US
dc.date.accessioned2024-05-22T16:57:37Zen_US
dc.date.available2024-05-22T16:57:37Zen_US
dc.date.created2024-05en_US
dc.date.issued2024-04-21en_US
dc.date.submittedMay 2024en_US
dc.date.updated2024-05-22T16:57:37Zen_US
dc.description.abstractThis thesis details the experimental development of memristors with an Aluminum Nitride (AlN) insulative layer that can switch its resistance by adjusting its phase. Upon conducting an exhaustive literature review, the opportunity to study the ferroelectric properties of AlN in a resistive switching setting came about. The experimental study starts by detailing the fabrication of memristors utilizing atomic layer deposition (ALD) and electrode deposition. To study the characteristics of the device, relevant AlN memristor samples underwent a full electrical characterization. While there were some interesting results, the current-voltage (I-V) data did not match the expected behavior and results. To further investigate the data, transmission electron microscopy (TEM) analysis was conducted to look inside the device at the nanometer scale. The TEM data highlights the difficulties of memristor fabrication and processing. The experimental process provided insight into the behavior of the ferroelectric properties of AlN suggesting resistive switching applications. However, further exploration of the fabrication and processing of AlN in memristors is required, before any industrial applications are pursued.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationAttarwala, Ali. Aluminum Nitride Memristors: The Fabrication and Analysis of a Next Generation Processor. (2024). Masters thesis, Rice University. https://hdl.handle.net/1911/116215en_US
dc.identifier.urihttps://hdl.handle.net/1911/116215en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectMemristorsen_US
dc.subjectaluminum nitrideen_US
dc.subjectelectric characterizationen_US
dc.titleAluminum Nitride Memristors: The Fabrication and Analysis of a Next Generation Processoren_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentMechanical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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