This thesis details the experimental development of memristors with an Aluminum Nitride (AlN) insulative layer that can switch its resistance by adjusting its phase. Upon conducting an exhaustive literature review, the opportunity to study the ferroelectric properties of AlN in a resistive switching setting came about. The experimental study starts by detailing the fabrication of memristors utilizing atomic layer deposition (ALD) and electrode deposition. To study the characteristics of the device, relevant AlN memristor samples underwent a full electrical characterization. While there were some interesting results, the current-voltage (I-V) data did not match the expected behavior and results. To further investigate the data, transmission electron microscopy (TEM) analysis was conducted to look inside the device at the nanometer scale. The TEM data highlights the difficulties of memristor fabrication and processing. The experimental process provided insight into the behavior of the ferroelectric properties of AlN suggesting resistive switching applications. However, further exploration of the fabrication and processing of AlN in memristors is required, before any industrial applications are pursued.