Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias

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dc.citation.articleNumber111103en_US
dc.citation.issueNumber11en_US
dc.citation.journalTitleAPL Materialsen_US
dc.citation.volumeNumber9en_US
dc.contributor.authorLi, Weijianen_US
dc.contributor.authorNaik, Gururaj V.en_US
dc.date.accessioned2021-12-02T15:09:18Zen_US
dc.date.available2021-12-02T15:09:18Zen_US
dc.date.issued2021en_US
dc.description.abstract1T-TaS2 is a 2D quantum material supporting charge density waves (CDWs) at room temperature. The strong correlations in this material make its electrical properties extremely sensitive to external stimuli such as an electrical bias and illumination. Recently, we demonstrated that the optical properties of this material also considerably change with electrical bias and light. With light, we showed that the CDW domains across layers stack differently and thus result in a unity-order change in the refractive index. Here, we demonstrate that an in-plane electrical bias also changes the CDW stacking in 1T-TaS2. However, the stacking change with electrical bias opposes that with illumination. Our experiments at room temperature suggest that an in-plane electrical bias sets the CDWs sliding and making way for the higher energy stacking configurations to switch to the ground-state stacking. The demonstration here sheds light on the origin of the giant electro-optical effect previously observed in 1T-TaS2 and paves the way for low-power MHz-fast electrically tunable optical devices.en_US
dc.identifier.citationLi, Weijian and Naik, Gururaj V.. "Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias." <i>APL Materials,</i> 9, no. 11 (2021) AIP Publishing: https://doi.org/10.1063/5.0069855.en_US
dc.identifier.digital5-0069855en_US
dc.identifier.doihttps://doi.org/10.1063/5.0069855en_US
dc.identifier.urihttps://hdl.handle.net/1911/111712en_US
dc.language.isoengen_US
dc.publisherAIP Publishingen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleReorganization of CDW stacking in 1T-TaS2 by an in-plane electrical biasen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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