Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ﾠfield effect transistors

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dc.citation.articleNumber203506en_US
dc.citation.issueNumber20en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber104en_US
dc.contributor.authorAmani, Matinen_US
dc.contributor.authorChin, Matthew L.en_US
dc.contributor.authorMazzoni, Alexander L.en_US
dc.contributor.authorBurke, Robert A.en_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorDubey, Madanen_US
dc.date.accessioned2017-06-05T17:33:45Zen_US
dc.date.available2017-06-05T17:33:45Zen_US
dc.date.issued2014en_US
dc.description.abstractWe report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.en_US
dc.identifier.citationAmani, Matin, Chin, Matthew L., Mazzoni, Alexander L., et al.. "Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ﾠfield effect transistors." <i>Applied Physics Letters,</i> 104, no. 20 (2014) AIP Publishing LLC.: http://dx.doi.org/10.1063/1.4873680.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4873680en_US
dc.identifier.urihttps://hdl.handle.net/1911/94763en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLC.en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleGrowth-substrate induced performance degradation in chemically synthesized monolayer MoS2ﾠfield effect transistorsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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