Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors

dc.citation.articleNumber203506en_US
dc.citation.issueNumber20en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber104en_US
dc.contributor.authorAmani, Matinen_US
dc.contributor.authorChin, Matthew L.en_US
dc.contributor.authorMazzoni, Alexander L.en_US
dc.contributor.authorBurke, Robert A.en_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorDubey, Madanen_US
dc.date.accessioned2017-06-05T17:33:45Z
dc.date.available2017-06-05T17:33:45Z
dc.date.issued2014en_US
dc.description.abstractWe report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.en_US
dc.identifier.citationAmani, Matin, Chin, Matthew L., Mazzoni, Alexander L., et al.. "Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors." <i>Applied Physics Letters,</i> 104, no. 20 (2014) AIP Publishing LLC.: http://dx.doi.org/10.1063/1.4873680.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4873680en_US
dc.identifier.urihttps://hdl.handle.net/1911/94763
dc.language.isoengen_US
dc.publisherAIP Publishing LLC.
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.titleGrowth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistorsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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