An Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon

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dc.citation.articleNumber367
dc.citation.issueNumber6
dc.citation.journalTitleMicromachines
dc.citation.volumeNumber10
dc.contributor.authorChen, Peiyu
dc.contributor.authorHosseini, Mostafa
dc.contributor.authorBabakhani, Aydin
dc.date.accessioned2019-11-18T18:20:48Z
dc.date.available2019-11-18T18:20:48Z
dc.date.issued2019
dc.description.abstractThis paper presents an integrated germanium (Ge)-based THz impulse radiator with an optical waveguide coupled photoconductive switch in a low-cost silicon-on-insulator (SOI) process. This process provides a Ge thin film, which is used as photoconductive material. To generate short THz impulses, N++ implant is added to the Ge thin film to reduce its photo-carrier lifetime to sub-picosecond for faster transient response. A bow-tie antenna is designed and connected to the photoconductive switch for radiation. To improve radiation efficiency, a silicon lens is attached to the substrate-side of the chip. This design features an optical-waveguide-enabled “horizontal” coupling mechanism between the optical excitation signal and the photoconductive switch. The THz emitter prototype works with 1550 nm femtosecond lasers. The radiated THz impulses achieve a full-width at half maximum (FWHM) of 1.14 ps and a bandwidth of 1.5 THz. The average radiated power is 0.337 μ W. Compared with conventional THz photoconductive antennas (PCAs), this design exhibits several advantages: First, it uses silicon-based technology, which reduces the fabrication cost; second, the excitation wavelength is 1550 nm, at which various low-cost laser sources operate; and third, in this design, the monolithic excitation mechanism between the excitation laser and the photoconductive switch enables on-chip programmable control of excitation signals for THz beam-steering.
dc.identifier.citationChen, Peiyu, Hosseini, Mostafa and Babakhani, Aydin. "An Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon." <i>Micromachines,</i> 10, no. 6 (2019) MDPI: https://doi.org/10.3390/mi10060367.
dc.identifier.digitalmicromachines-10-00367
dc.identifier.doihttps://doi.org/10.3390/mi10060367
dc.identifier.urihttps://hdl.handle.net/1911/107699
dc.language.isoeng
dc.publisherMDPI
dc.rightsThis is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.keywordgermanium
dc.subject.keywordintegrated optics
dc.subject.keywordoptoelectronics
dc.subject.keywordphotoconductivity
dc.subject.keywordsilicon photonics
dc.subject.keywordterahertz
dc.titleAn Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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