An Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon
dc.citation.articleNumber | 367 | en_US |
dc.citation.issueNumber | 6 | en_US |
dc.citation.journalTitle | Micromachines | en_US |
dc.citation.volumeNumber | 10 | en_US |
dc.contributor.author | Chen, Peiyu | en_US |
dc.contributor.author | Hosseini, Mostafa | en_US |
dc.contributor.author | Babakhani, Aydin | en_US |
dc.date.accessioned | 2019-11-18T18:20:48Z | en_US |
dc.date.available | 2019-11-18T18:20:48Z | en_US |
dc.date.issued | 2019 | en_US |
dc.description.abstract | This paper presents an integrated germanium (Ge)-based THz impulse radiator with an optical waveguide coupled photoconductive switch in a low-cost silicon-on-insulator (SOI) process. This process provides a Ge thin film, which is used as photoconductive material. To generate short THz impulses, N++ implant is added to the Ge thin film to reduce its photo-carrier lifetime to sub-picosecond for faster transient response. A bow-tie antenna is designed and connected to the photoconductive switch for radiation. To improve radiation efficiency, a silicon lens is attached to the substrate-side of the chip. This design features an optical-waveguide-enabled “horizontal” coupling mechanism between the optical excitation signal and the photoconductive switch. The THz emitter prototype works with 1550 nm femtosecond lasers. The radiated THz impulses achieve a full-width at half maximum (FWHM) of 1.14 ps and a bandwidth of 1.5 THz. The average radiated power is 0.337 μ W. Compared with conventional THz photoconductive antennas (PCAs), this design exhibits several advantages: First, it uses silicon-based technology, which reduces the fabrication cost; second, the excitation wavelength is 1550 nm, at which various low-cost laser sources operate; and third, in this design, the monolithic excitation mechanism between the excitation laser and the photoconductive switch enables on-chip programmable control of excitation signals for THz beam-steering. | en_US |
dc.identifier.citation | Chen, Peiyu, Hosseini, Mostafa and Babakhani, Aydin. "An Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon." <i>Micromachines,</i> 10, no. 6 (2019) MDPI: https://doi.org/10.3390/mi10060367. | en_US |
dc.identifier.digital | micromachines-10-00367 | en_US |
dc.identifier.doi | https://doi.org/10.3390/mi10060367 | en_US |
dc.identifier.uri | https://hdl.handle.net/1911/107699 | en_US |
dc.language.iso | eng | en_US |
dc.publisher | MDPI | en_US |
dc.rights | This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_US |
dc.subject.keyword | germanium | en_US |
dc.subject.keyword | integrated optics | en_US |
dc.subject.keyword | optoelectronics | en_US |
dc.subject.keyword | photoconductivity | en_US |
dc.subject.keyword | silicon photonics | en_US |
dc.subject.keyword | terahertz | en_US |
dc.title | An Integrated Germanium-Based THz Impulse Radiator with an Optical Waveguide Coupled Photoconductive Switch in Silicon | en_US |
dc.type | Journal article | en_US |
dc.type.dcmi | Text | en_US |
dc.type.publication | publisher version | en_US |
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