β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

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dc.citation.articleNumber1234
dc.citation.issueNumber7
dc.citation.journalTitleElectronics
dc.citation.volumeNumber13
dc.contributor.authorHerath Mudiyanselage, Dinusha
dc.contributor.authorDa, Bingcheng
dc.contributor.authorAdivarahan, Jayashree
dc.contributor.authorWang, Dawei
dc.contributor.authorHe, Ziyi
dc.contributor.authorFu, Kai
dc.contributor.authorZhao, Yuji
dc.contributor.authorFu, Houqiang
dc.date.accessioned2024-07-25T20:55:16Z
dc.date.available2024-07-25T20:55:16Z
dc.date.issued2024
dc.description.abstractDuring the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.
dc.identifier.citationHerath Mudiyanselage, D., Da, B., Adivarahan, J., Wang, D., He, Z., Fu, K., Zhao, Y., & Fu, H. (2024). β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances. Electronics, 13(7), Article 7. https://doi.org/10.3390/electronics13071234
dc.identifier.digitalelectronics-13-01234
dc.identifier.doihttps://doi.org/10.3390/electronics13071234
dc.identifier.urihttps://hdl.handle.net/1911/117512
dc.language.isoeng
dc.publisherMDPI
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleβ-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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