β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

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dc.citation.articleNumber1234en_US
dc.citation.issueNumber7en_US
dc.citation.journalTitleElectronicsen_US
dc.citation.volumeNumber13en_US
dc.contributor.authorHerath Mudiyanselage, Dinushaen_US
dc.contributor.authorDa, Bingchengen_US
dc.contributor.authorAdivarahan, Jayashreeen_US
dc.contributor.authorWang, Daweien_US
dc.contributor.authorHe, Ziyien_US
dc.contributor.authorFu, Kaien_US
dc.contributor.authorZhao, Yujien_US
dc.contributor.authorFu, Houqiangen_US
dc.date.accessioned2024-07-25T20:55:16Zen_US
dc.date.available2024-07-25T20:55:16Zen_US
dc.date.issued2024en_US
dc.description.abstractDuring the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.en_US
dc.identifier.citationHerath Mudiyanselage, D., Da, B., Adivarahan, J., Wang, D., He, Z., Fu, K., Zhao, Y., & Fu, H. (2024). β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances. Electronics, 13(7), Article 7. https://doi.org/10.3390/electronics13071234en_US
dc.identifier.digitalelectronics-13-01234en_US
dc.identifier.doihttps://doi.org/10.3390/electronics13071234en_US
dc.identifier.urihttps://hdl.handle.net/1911/117512en_US
dc.language.isoengen_US
dc.publisherMDPIen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleβ-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advancesen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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