The understanding of magnetism in strongly correlated electronic systems is a vital area of research. Not only is it linked to other phenomena like high temperature superconductivity in the cuprates and iron pnictides, but magnetic materials have been used in electronics since before the computer. As it becomes harder to prop up Moore's law by increasing the density of transistors, mankind must look towards new methods to improve technology or risk stagnation. Research into alternative materials for technology, such as transition metal dichalcogenides, is a promising direction of research to maintain the rate of technological improvement. Our work focuses on the effect of iron intercalation in TiS2. Single crystals of FexTiS2 (0 ≤x≤ 1) were grown using vapor transport. Anisotropic susceptibility and magnetization measurements of the samples were measured, showing ferromagnetism and sharp switching behavior in the magnetization. Finally electrical transport measurements were taken, both with and without field. Measurements of magnetoresistance for x = 0.2 and 0.3 show large magnetoresistance (up to ∼ 60%) and an atypical `bowtie' shape.