Purcell Enhancement of a single T center in a silicon nanophotonic cavity

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dc.contributor.advisorChen, Songtaoen_US
dc.creatorJohnston, Adamen_US
dc.date.accessioned2024-08-30T16:33:20Zen_US
dc.date.available2024-08-30T16:33:20Zen_US
dc.date.created2024-08en_US
dc.date.issued2024-07-25en_US
dc.date.submittedAugust 2024en_US
dc.date.updated2024-08-30T16:33:20Zen_US
dc.description.abstractImplementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationJohnston, Adam. Purcell Enhancement of a single T center in a silicon nanophotonic cavity. (2024). Masters thesis, Rice University. https://hdl.handle.net/1911/117792en_US
dc.identifier.urihttps://hdl.handle.net/1911/117792en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectnanophotonicsen_US
dc.subjectT centeren_US
dc.subjectsiliconen_US
dc.subjectquantum opticsen_US
dc.titlePurcell Enhancement of a single T center in a silicon nanophotonic cavityen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentApplied Physicsen_US
thesis.degree.disciplineApplied Physics/Electrical Engen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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