Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

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dc.citation.articleNumber014501en_US
dc.citation.journalTitleStructural Dynamicsen_US
dc.citation.volumeNumber8en_US
dc.contributor.authorBritz, Alexanderen_US
dc.contributor.authorAttar, Andrew R.en_US
dc.contributor.authorZhang, Xiangen_US
dc.contributor.authorChang, Hung-Tzuen_US
dc.contributor.authorNyby, Claraen_US
dc.contributor.authorKrishnamoorthy, Aravinden_US
dc.contributor.authorPark, Sang Hanen_US
dc.contributor.authorKwon, Soonnamen_US
dc.contributor.authorKim, Minseoken_US
dc.contributor.authorNordlund, Dennisen_US
dc.contributor.authorSainio, Samien_US
dc.contributor.authorHeinz, Tony F.en_US
dc.contributor.authorLeone, Stephen R.en_US
dc.contributor.authorLindenberg, Aaron M.en_US
dc.contributor.authorNakano, Aiichiroen_US
dc.contributor.authorAjayan, Pulickelen_US
dc.contributor.authorVashishta, Priyaen_US
dc.contributor.authorFritz, Daviden_US
dc.contributor.authorLin, Ming-Fuen_US
dc.contributor.authorBergmann, Uween_US
dc.date.accessioned2021-02-24T19:15:42Zen_US
dc.date.available2021-02-24T19:15:42Zen_US
dc.date.issued2021en_US
dc.description.abstractFemtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d5/2 core level (M5-edge, 572–577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1–2 ps timescale, which is interpreted as electron–hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.en_US
dc.identifier.citationBritz, Alexander, Attar, Andrew R., Zhang, Xiang, et al.. "Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser." <i>Structural Dynamics,</i> 8, (2021) AIP Publishing: https://doi.org/10.1063/4.0000048.en_US
dc.identifier.digital4-0000048en_US
dc.identifier.doihttps://doi.org/10.1063/4.0000048en_US
dc.identifier.urihttps://hdl.handle.net/1911/110080en_US
dc.language.isoengen_US
dc.publisherAIP Publishingen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/).en_US
dc.titleCarrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laseren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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