Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

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dc.citation.articleNumber014501
dc.citation.journalTitleStructural Dynamics
dc.citation.volumeNumber8
dc.contributor.authorBritz, Alexander
dc.contributor.authorAttar, Andrew R.
dc.contributor.authorZhang, Xiang
dc.contributor.authorChang, Hung-Tzu
dc.contributor.authorNyby, Clara
dc.contributor.authorKrishnamoorthy, Aravind
dc.contributor.authorPark, Sang Han
dc.contributor.authorKwon, Soonnam
dc.contributor.authorKim, Minseok
dc.contributor.authorNordlund, Dennis
dc.contributor.authorSainio, Sami
dc.contributor.authorHeinz, Tony F.
dc.contributor.authorLeone, Stephen R.
dc.contributor.authorLindenberg, Aaron M.
dc.contributor.authorNakano, Aiichiro
dc.contributor.authorAjayan, Pulickel
dc.contributor.authorVashishta, Priya
dc.contributor.authorFritz, David
dc.contributor.authorLin, Ming-Fu
dc.contributor.authorBergmann, Uwe
dc.date.accessioned2021-02-24T19:15:42Z
dc.date.available2021-02-24T19:15:42Z
dc.date.issued2021
dc.description.abstractFemtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d5/2 core level (M5-edge, 572–577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1–2 ps timescale, which is interpreted as electron–hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.
dc.identifier.citationBritz, Alexander, Attar, Andrew R., Zhang, Xiang, et al.. "Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser." <i>Structural Dynamics,</i> 8, (2021) AIP Publishing: https://doi.org/10.1063/4.0000048.
dc.identifier.digital4-0000048
dc.identifier.doihttps://doi.org/10.1063/4.0000048
dc.identifier.urihttps://hdl.handle.net/1911/110080
dc.language.isoeng
dc.publisherAIP Publishing
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/).
dc.titleCarrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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