Halogen-activated chemical vapor deposition of diamond

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorHauge, Robert H.en_US
dc.creatorPan, Chenyuen_US
dc.date.accessioned2015-05-04T19:05:29Zen_US
dc.date.available2015-05-04T19:05:29Zen_US
dc.date.filed1995-04-04en_US
dc.date.issued1996-12-31en_US
dc.description.abstractThe present invention is directed to a method of producing diamond films through the thermal dissociation of molecular chlorine into atomic chlorine in a heated graphite heat exchanger at temperatures of from about 1,100° C. to about 1,800° C. The atomic chlorine is subsequently rapidly mixed with molecular hydrogen and carbon-containing species downstream. Atomic hydrogen and the carbon precursors are produced through rapid hydrogen abstraction reactions of atomic chlorine with molecular hydrogen and hydrocarbons at the point where they mix. The mixed gases then flow across a heated substrate, where diamond is deposited as a film. Diamond deposits have been confirmed by Raman spectroscopy.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes.en_US
dc.format.extent10 ppen_US
dc.identifier.citationHauge, Robert H. and Pan, Chenyu, "Halogen-activated chemical vapor deposition of diamond." Patent US5589231A. issued 1996-12-31. Retrieved from https://hdl.handle.net/1911/79827.en_US
dc.identifier.patentIDUS5589231Aen_US
dc.identifier.urihttps://hdl.handle.net/1911/79827en_US
dc.language.isoengen_US
dc.titleHalogen-activated chemical vapor deposition of diamonden_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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