Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

Simple item page
dc.citation.articleNumber2201031
dc.citation.issueNumber4
dc.citation.journalTitleAdvanced Electronic Materials
dc.citation.volumeNumber9
dc.contributor.authorChiu, Ming-Hui
dc.contributor.authorJi, Xiang
dc.contributor.authorZhang, Tianyi
dc.contributor.authorMao, Nannan
dc.contributor.authorLuo, Yue
dc.contributor.authorShi, Chuqiao
dc.contributor.authorZheng, Xudong
dc.contributor.authorLiu, Hongwei
dc.contributor.authorHan, Yimo
dc.contributor.authorWilson, William L.
dc.contributor.authorLuo, Zhengtang
dc.contributor.authorTung, Vincent
dc.contributor.authorKong, Jing
dc.date.accessioned2023-04-25T14:47:41Z
dc.date.available2023-04-25T14:47:41Z
dc.date.issued2023
dc.description.abstractTin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high-quality 2D SnSe crystals are synthesized via low-pressure PVD, which display in-plane ferroelectric domains observed by piezoresponse force microscopy and polarization-dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre-annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large-area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness.
dc.identifier.citationChiu, Ming-Hui, Ji, Xiang, Zhang, Tianyi, et al.. "Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity." <i>Advanced Electronic Materials,</i> 9, no. 4 (2023) Wiley: https://doi.org/10.1002/aelm.202201031.
dc.identifier.digital2023-Chiu
dc.identifier.doihttps://doi.org/10.1002/aelm.202201031
dc.identifier.urihttps://hdl.handle.net/1911/114812
dc.language.isoeng
dc.publisherWiley
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleGrowth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
2023-Chiu.pdf
Size:
1.47 MB
Format:
Adobe Portable Document Format
Download
Collections
Faculty Publications
Materials Science and NanoEngineering Publications