Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity

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dc.citation.articleNumber2201031en_US
dc.citation.issueNumber4en_US
dc.citation.journalTitleAdvanced Electronic Materialsen_US
dc.citation.volumeNumber9en_US
dc.contributor.authorChiu, Ming-Huien_US
dc.contributor.authorJi, Xiangen_US
dc.contributor.authorZhang, Tianyien_US
dc.contributor.authorMao, Nannanen_US
dc.contributor.authorLuo, Yueen_US
dc.contributor.authorShi, Chuqiaoen_US
dc.contributor.authorZheng, Xudongen_US
dc.contributor.authorLiu, Hongweien_US
dc.contributor.authorHan, Yimoen_US
dc.contributor.authorWilson, William L.en_US
dc.contributor.authorLuo, Zhengtangen_US
dc.contributor.authorTung, Vincenten_US
dc.contributor.authorKong, Jingen_US
dc.contributor.orgMaterials Science and Nanoengineeringen_US
dc.date.accessioned2023-04-25T14:47:41Zen_US
dc.date.available2023-04-25T14:47:41Zen_US
dc.date.issued2023en_US
dc.description.abstractTin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high-quality 2D SnSe crystals are synthesized via low-pressure PVD, which display in-plane ferroelectric domains observed by piezoresponse force microscopy and polarization-dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre-annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large-area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness.en_US
dc.identifier.citationChiu, Ming-Hui, Ji, Xiang, Zhang, Tianyi, et al.. "Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity." <i>Advanced Electronic Materials,</i> 9, no. 4 (2023) Wiley: https://doi.org/10.1002/aelm.202201031.en_US
dc.identifier.digital2023-Chiuen_US
dc.identifier.doihttps://doi.org/10.1002/aelm.202201031en_US
dc.identifier.urihttps://hdl.handle.net/1911/114812en_US
dc.language.isoengen_US
dc.publisherWileyen_US
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleGrowth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricityen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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