Growth methods for controlled large-area fabrication of high-quality graphene analogs

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dc.contributor.assigneeRice Universityeng
dc.contributor.publisherUnited States Patent and Trademark Officeeng
dc.creatorNajmaei, Sina
dc.creatorLiu, Zheng
dc.creatorAjayan, Pulickel M.
dc.creatorLou, Jun
dc.date.accessioned2017-04-25T16:31:15Z
dc.date.available2017-04-25T16:31:15Z
dc.date.filed2014-03-11
dc.date.issued2017-02-28
dc.description.abstractIn some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS2.eng
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposeseng
dc.format.extent46eng
dc.identifier.citationNajmaei, Sina, Liu, Zheng, Ajayan, Pulickel M. and Lou, Jun, "Growth methods for controlled large-area fabrication of high-quality graphene analogs." Patent US9580834B2. issued 2017-02-28. Retrieved from <a href="https://hdl.handle.net/1911/94106">https://hdl.handle.net/1911/94106</a>.
dc.identifier.patentIDUS9580834B2eng
dc.identifier.urihttps://hdl.handle.net/1911/94106
dc.language.isoengeng
dc.titleGrowth methods for controlled large-area fabrication of high-quality graphene analogseng
dc.typeUtility patenteng
dc.type.dcmiTexteng
dc.type.genrepatentseng
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