Growth methods for controlled large-area fabrication of high-quality graphene analogs

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorNajmaei, Sinaen_US
dc.creatorLiu, Zhengen_US
dc.creatorAjayan, Pulickel M.en_US
dc.creatorLou, Junen_US
dc.date.accessioned2017-04-25T16:31:15Zen_US
dc.date.available2017-04-25T16:31:15Zen_US
dc.date.filed2014-03-11en_US
dc.date.issued2017-02-28en_US
dc.description.abstractIn some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS2.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposesen_US
dc.format.extent46en_US
dc.identifier.citationNajmaei, Sina, Liu, Zheng, Ajayan, Pulickel M. and Lou, Jun, "Growth methods for controlled large-area fabrication of high-quality graphene analogs." Patent US9580834B2. issued 2017-02-28. Retrieved from <a href="https://hdl.handle.net/1911/94106">https://hdl.handle.net/1911/94106</a>.en_US
dc.identifier.patentIDUS9580834B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/94106en_US
dc.language.isoengen_US
dc.titleGrowth methods for controlled large-area fabrication of high-quality graphene analogsen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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