Vertical and in-plane heterostructures from WS2/MoS2 monolayers

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dc.citation.firstpage1135en_US
dc.citation.journalTitleNature Materialsen_US
dc.citation.lastpage1142en_US
dc.citation.volumeNumber13en_US
dc.contributor.authorGong, Yongjien_US
dc.contributor.authorLin, Junhaoen_US
dc.contributor.authorWang, Xinglien_US
dc.contributor.authorShi, Gangen_US
dc.contributor.authorLei, Sidongen_US
dc.contributor.authorLin, Zhongen_US
dc.contributor.authorZou, Xiaolongen_US
dc.contributor.authorYe, Gonglanen_US
dc.contributor.authorVajtai, Roberten_US
dc.contributor.authorYakobson, Boris I.en_US
dc.contributor.authorTerrones, Humbertoen_US
dc.contributor.authorTerrones, Mauricioen_US
dc.contributor.authorTay, Beng Kangen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorPantelides, Sokrates T.en_US
dc.contributor.authorLiu, Zhengen_US
dc.contributor.authorZhou, Wuen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.date.accessioned2015-01-08T14:55:03Zen_US
dc.date.available2015-01-08T14:55:03Zen_US
dc.date.issued2014en_US
dc.description.abstractLayer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p–n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.en_US
dc.identifier.citationGong, Yongji, Lin, Junhao, Wang, Xingli, et al.. "Vertical and in-plane heterostructures from WS2/MoS2 monolayers." <i>Nature Materials,</i> 13, (2014) Nature Publishing Group: 1135-1142. http://dx.doi.org/10.1038/nmat4091.en_US
dc.identifier.doihttp://dx.doi.org/10.1038/nmat4091en_US
dc.identifier.urihttps://hdl.handle.net/1911/78911en_US
dc.language.isoengen_US
dc.publisherNature Publishing Groupen_US
dc.rightsThis is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by Nature Publishing Group.en_US
dc.titleVertical and in-plane heterostructures from WS2/MoS2 monolayersen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpost-printen_US
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