Percolation and nanosecond fluctuators in V2O3 films within the metal-insulator transition

dc.contributor.advisorNatelson, Douglas
dc.creatorChen, LiYang
dc.date.accessioned2020-08-14T18:32:17Z
dc.date.available2020-08-14T18:32:17Z
dc.date.created2020-08
dc.date.issued2020-08-14
dc.date.submittedAugust 2020
dc.date.updated2020-08-14T18:32:18Z
dc.description.abstractVanadium sesquioxide (V2O3) exhibits a first-order metal-insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, due to strain, the transition takes place over a finite temperature range of phase coexistence. Resistive noise measured through electronic transport is a probe of percolation and the fluctuating dynamics of the two-phase domain structure. We measure voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). At low current densities the voltage noise intensity is quadratic in bias current, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise generally resembles flicker-type 1/f^α noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity that is quadratic in the bias current allows identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump-probe studies of the transition. Noise at higher current densities show non-quadratic bias dependence, implying current-driven changes to the domain dynamics. We find quantitative consistency with a model for fluctuations in the percolative fraction, though thermodynamic analysis implies that switching of domains between metal and insulator phases can only happen on spatial scales comparable to a unit cell.
dc.format.mimetypeapplication/pdf
dc.identifier.citationChen, LiYang. "Percolation and nanosecond fluctuators in V2O3 films within the metal-insulator transition." (2020) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/109197">https://hdl.handle.net/1911/109197</a>.
dc.identifier.urihttps://hdl.handle.net/1911/109197
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectstrongly correlated system
dc.subjectV2O3
dc.subjectpercolation
dc.subjectnoise
dc.titlePercolation and nanosecond fluctuators in V2O3 films within the metal-insulator transition
dc.typeThesis
dc.type.materialText
thesis.degree.departmentApplied Physics
thesis.degree.disciplineNatural Sciences
thesis.degree.grantorRice University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science
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