Vanadium sesquioxide (V2O3) exhibits a first-order metal-insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, due to strain, the transition takes place over a finite temperature range of phase coexistence. Resistive noise measured through electronic transport is a probe of percolation and the fluctuating dynamics of the two-phase domain structure. We measure voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). At low current densities the voltage noise intensity is quadratic in bias current, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise generally resembles flicker-type 1/f^α noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity that is quadratic in the bias current allows identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump-probe studies of the transition. Noise at higher current densities show non-quadratic bias dependence, implying current-driven changes to the domain dynamics. We find quantitative consistency with a model for fluctuations in the percolative fraction, though thermodynamic analysis implies that switching of domains between metal and insulator phases can only happen on spatial scales comparable to a unit cell.