Browsing by Author "Yi, Kongyang"

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    High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant
    (Springer Nature, 2024) Fang, Qiyi; Yi, Kongyang; Zhai, Tianshu; Luo, Shisong; Lin, Chen-yang; Ai, Qing; Zhu, Yifan; Zhang, Boyu; Alvarez, Gustavo A.; Shao, Yanjie; Zhou, Haolei; Gao, Guanhui; Liu, Yifeng; Xu, Rui; Zhang, Xiang; Wang, Yuzhe; Tian, Xiaoyin; Zhang, Honghu; Han, Yimo; Zhu, Hanyu; Zhao, Yuji; Tian, Zhiting; Zhong, Yu; Liu, Zheng; Lou, Jun; Rice Advanced Materials Institute
    As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.