Browsing by Author "Sinitskiy, Alexander"
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Item Electronic switching- memory- and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials(2013-05-14) Tour, James M.; Li, Yubao; Sinitskiy, Alexander; Rice University; United States Patent and Trademark OfficeElectronic devices comprising a dielectric material, at least one carbon sheet, and two electrode terminals are described herein. The devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. Uses of the electronic devices as two-terminal memory devices, logic units, and sensors are disclosed. Processes for making the electronic devices are disclosed. Methods for using the electronic devices in analytical methods are disclosed.Item Method for fabrication of a semiconductor element and structure thereof(2011-07-05) Or-Bach, Zvi; Tour, James M.; Sinitskiy, Alexander; Yao, Jun; Beitler, Elvira; Rice University; United States Patent and Trademark OfficeRe-programmable antifuses and structures utilizing re-programmable antifuses are presented. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Other embodiments of antifuses include an initializing step prior to programming.Item Vertically-stacked electronic devices having conductive carbon films(2013-03-12) Tour, James M.; Li, Yubao; Sinitskiy, Alexander; Zhong, Lin; Dong, Mian; Yao, Jun; Rice University; United States Patent and Trademark OfficeVertically-stacked electronic devices having conductive carbon films are disclosed. The vertically-stacked devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. The vertically-stacked devices may be assembled into arrays where the vertically-stacked devices may be electrically addressed independently of one another. Uses of the vertically-stacked electronic devices and arrays as two-terminal memory devices, logic units, and sensors are disclosed. Crossbar arrays of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes are disclosed.