Browsing by Author "Rhodes, D."

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    Anomalous Metamagnetism in the Low Carrier Density Kondo Lattice YbRh3Si7
    (American Physical Society, 2018) Rai, Binod K.; Chikara, S.; Ding, Xiaxin; Oswald, Iain W.H.; Schönemann, R.; Loganathan, V.; Hallas, A.M.; Cao, H.B.; Stavinoha, Macy; Chen, T.; Man, Haoran; Carr, Scott; Singleton, John; Zapf, Vivien; Benavides, Katherine A.; Chan, Julia Y.; Zhang, Q.R.; Rhodes, D.; Chiu, Y.C.; Balicas, Luis; Aczel, A.A.; Huang, Q.; Lynn, Jeffrey W.; Gaudet, J.; Sokolov, D.A.; Walker, H.C.; Adroja, D.T.; Dai, Pengcheng; Nevidomskyy, Andriy H.; Huang, C.-L.; Morosan, E.
    We report complex metamagnetic transitions in single crystals of the new low carrier Kondo antiferromagnet YbRh3Si7. Electrical transport, magnetization, and specific heat measurements reveal antiferromagnetic order at TN=7.5 K. Neutron diffraction measurements show that the magnetic ground state of YbRh3Si7 is a collinear antiferromagnet, where the moments are aligned in the ab plane. With such an ordered state, no metamagnetic transitions are expected when a magnetic field is applied along the c axis. It is therefore surprising that high-field magnetization, torque, and resistivity measurements with H∥c reveal two metamagnetic transitions at μ0H1=6.7 T and μ0H2=21 T. When the field is tilted away from the c axis, towards the ab plane, both metamagnetic transitions are shifted to higher fields. The first metamagnetic transition leads to an abrupt increase in the electrical resistivity, while the second transition is accompanied by a dramatic reduction in the electrical resistivity. Thus, the magnetic and electronic degrees of freedom in YbRh3Si7 are strongly coupled. We discuss the origin of the anomalous metamagnetism and conclude that it is related to competition between crystal electric-field anisotropy and anisotropic exchange interactions.
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    Hall and field-effect mobilities in few layeredﾠp-WSe2ﾠfield-effect transistors
    (Macmillan Publishers Limited, 2015) Pradhan, N.R.; Rhodes, D.; Memaran, S.; Poumirol, J.M.; Smirnov, D.; Talapatra, S.; Feng, S.; Perea-Lopez, N.; Elias, A.L.; Terrones, M.; Ajayan, P.M.; Balicas, L.
    Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is lowered below ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.
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    Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
    (American Institute of Physics, 2013) Pradhan, N.R.; Rhodes, D.; Zhang, Q.; Talapatra, S.; Terrones, M.; Ajayan, P.M.; Balicas, L.