Browsing by Author "Luo, Shisong"

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    Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method
    (IOP Publishing, 2024) Zhou, Jingan; Li, Tao; Zhao, Xuan; Zhang, Xiang; Doumani, Jacques; Xu, Mingfei; He, Ziyi; Luo, Shisong; Mei, Zhaobo; Chang, Cheng; Robinson, Jacob T.; Ajayan, Pulickel M.; Kono, Junichiro; Zhao, Yuji; Smalley-Curl Institute
    In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.
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    High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant
    (Springer Nature, 2024) Fang, Qiyi; Yi, Kongyang; Zhai, Tianshu; Luo, Shisong; Lin, Chen-yang; Ai, Qing; Zhu, Yifan; Zhang, Boyu; Alvarez, Gustavo A.; Shao, Yanjie; Zhou, Haolei; Gao, Guanhui; Liu, Yifeng; Xu, Rui; Zhang, Xiang; Wang, Yuzhe; Tian, Xiaoyin; Zhang, Honghu; Han, Yimo; Zhu, Hanyu; Zhao, Yuji; Tian, Zhiting; Zhong, Yu; Liu, Zheng; Lou, Jun; Rice Advanced Materials Institute
    As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.