Browsing by Author "Birdwell, A. Glen"

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    Blueshift of the A-exciton peak in folded monolayer 1H-MoS2
    (American Physical Society, 2013) Crowne, Frank J.; Amani, Matin; Birdwell, A. Glen; Chin, Matthew L.; O'Regan, Terrance P.; Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan
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    Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
    (American Institute of Physics, 2013) Amani, Matin; Chin, Matthew L.; Birdwell, A. Glen; O'Regan, Terrance P.; Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan
    Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300K without a high-j dielectric overcoat and increased to 16.1 cm2/V s with a high-j dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.