GR-FET application for high-frequency detection device

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dc.citation.journalTitleNano Expressen_US
dc.citation.volumeNumber8en_US
dc.contributor.authorMahjoub, Akram M.en_US
dc.contributor.authorNicol, Alecen_US
dc.contributor.authorAbe, Takutoen_US
dc.contributor.authorOuchi, Takahiroen_US
dc.contributor.authorIso, Yuheien_US
dc.contributor.authorKida, Michioen_US
dc.contributor.authorAoki, Noboyukien_US
dc.contributor.authorMiyamoto, Katsuhikoen_US
dc.contributor.authorOmatsu, Takashigeen_US
dc.contributor.authorBird, Jonathan P.en_US
dc.contributor.authorFerry, David K.en_US
dc.contributor.authorIshibashi, Kojien_US
dc.contributor.authorOchiai, Yuichien_US
dc.date.accessioned2014-11-11T16:06:21Zen_US
dc.date.available2014-11-11T16:06:21Zen_US
dc.date.issued2013en_US
dc.description.abstractA small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.en_US
dc.identifier.citationMahjoub, Akram M., Nicol, Alec, Abe, Takuto, et al.. "GR-FET application for high-frequency detection device." <i>Nano Express,</i> 8, (2013) Springer: http://www.nanoscalereslett.com/content/8/1/22.en_US
dc.identifier.doihttp://www.nanoscalereslett.com/content/8/1/22en_US
dc.identifier.urihttps://hdl.handle.net/1911/78264en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.subject.keywordgrapheneen_US
dc.subject.keywordmicrowave applicationen_US
dc.subject.keywordterahertz detectionen_US
dc.subject.keywordfrequency responseen_US
dc.subject.keywordbolometric effecten_US
dc.subject.keywordnonlinear effecten_US
dc.subject.keywordambient conditionen_US
dc.titleGR-FET application for high-frequency detection deviceen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
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