GR-FET application for high-frequency detection device

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dc.citation.journalTitleNano Expressen_US
dc.citation.volumeNumber8en_US
dc.contributor.authorMahjoub, Akram M.
dc.contributor.authorNicol, Alec
dc.contributor.authorAbe, Takuto
dc.contributor.authorOuchi, Takahiro
dc.contributor.authorIso, Yuhei
dc.contributor.authorKida, Michio
dc.contributor.authorAoki, Noboyuki
dc.contributor.authorMiyamoto, Katsuhiko
dc.contributor.authorOmatsu, Takashige
dc.contributor.authorBird, Jonathan P.
dc.contributor.authorFerry, David K.
dc.contributor.authorIshibashi, Koji
dc.contributor.authorOchiai, Yuichi
dc.date.accessioned2014-11-11T16:06:21Z
dc.date.available2014-11-11T16:06:21Z
dc.date.issued2013
dc.description.abstractA small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.en_US
dc.identifier.citationMahjoub, Akram M., Nicol, Alec, Abe, Takuto, et al.. "GR-FET application for high-frequency detection device." <i>Nano Express,</i> 8, (2013) Springer: http://www.nanoscalereslett.com/content/8/1/22.
dc.identifier.doihttp://www.nanoscalereslett.com/content/8/1/22en_US
dc.identifier.urihttps://hdl.handle.net/1911/78264
dc.language.isoengen_US
dc.publisherSpringer
dc.subject.keywordgrapheneen_US
dc.subject.keywordmicrowave applicationen_US
dc.subject.keywordterahertz detectionen_US
dc.subject.keywordfrequency responseen_US
dc.subject.keywordbolometric effecten_US
dc.subject.keywordnonlinear effecten_US
dc.subject.keywordambient conditionen_US
dc.titleGR-FET application for high-frequency detection deviceen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
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