Methods of electrically characterizing zinc selenide epitaxial layers on gallium arsenide substrates

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dc.contributor.advisorWilson, William L., Jr.en_US
dc.creatorHaynes, William Brianen_US
dc.date.accessioned2009-06-04T00:35:30Zen_US
dc.date.available2009-06-04T00:35:30Zen_US
dc.date.issued1994en_US
dc.description.abstractA number of different methods for electrically characterizing ZnSe thin films are presented. These include the Hall effect, current-voltage profiling, and capacitance-voltage profiling. The planar Schottky technique is used to analyze p-type ZnSe. The conductance method of Nicollian and Brews is applied for the first time to the ZnSe/GaAs MIS system to find the surface state density profile and the time constants associated with particular states. A novel photowash technique is used to make the GaAs surface gallium rich before ZnSe growth. Electron Paramagnetic Resonance is discussed in the context of probing thin film semiconductors. Room temperature mobilities for undoped, 1 $\rm\mu m,$ ZnSe films grown by Laser-assisted Metal Organic Chemical Vapor Deposition are as high as 309 $\rm cm\sp2/V$-s. Measured mobilities at 77 K are low due to hole conduction in p-type GaAs at the interface. Heterojunction barrier heights are found to be in the range of 0.6-0.9 eV and are most likely due to interface traps. Schottky diode n-values are found to be high ($>$30) because of the heterojunction barrier. P-type conduction in the nitrogen-doped samples has not been found. Undoped ZnSe is n-type and is typically depleted of carriers. Surface state densities for both untreated and Ga-rich ZnSe/p-GaAs interfaces are found to be in the range of $10\sp{12}$ $\rm cm\sp{-2}$-$\rm eV\sp{-1}.$en_US
dc.format.extent169 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS E.E. 1994 HAYNESen_US
dc.identifier.citationHaynes, William Brian. "Methods of electrically characterizing zinc selenide epitaxial layers on gallium arsenide substrates." (1994) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/13843">https://hdl.handle.net/1911/13843</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/13843en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectElectronicsen_US
dc.subjectElectrical engineeringen_US
dc.subjectCondensed matter physicsen_US
dc.subjectPhysicsen_US
dc.subjectElectromagneticsen_US
dc.titleMethods of electrically characterizing zinc selenide epitaxial layers on gallium arsenide substratesen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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