Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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dc.citation.firstpage227402en_US
dc.citation.journalTitlePhysical Review Lettersen_US
dc.citation.volumeNumber110en_US
dc.contributor.authorKim, Y.en_US
dc.contributor.authorPoumirol, J.M.en_US
dc.contributor.authorLombardo, A.en_US
dc.contributor.authorKalugin, N.G.en_US
dc.contributor.authorGeorgiou, T.en_US
dc.contributor.authorKim, Y.J.en_US
dc.contributor.authorNovoselov, K.S.en_US
dc.contributor.authorFerrari, A.C.en_US
dc.contributor.authorKono, J.en_US
dc.contributor.authorKashuba, O.en_US
dc.contributor.authorFal’ko, V.I.en_US
dc.contributor.authorSmirnov, D.en_US
dc.date.accessioned2013-09-18T17:04:50Zen_US
dc.date.available2013-09-18T17:04:50Zen_US
dc.date.issued2013-05-29en_US
dc.description.abstractWe perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.en_US
dc.identifier.citationY. Kim, J. Poumirol, A. Lombardo, N. Kalugin, T. Georgiou, Y. Kim, K. Novoselov, A. Ferrari, J. Kono, O. Kashuba, V. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," <i>Physical Review Letters,</i> vol. 110, 2013.en_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.110.227402en_US
dc.identifier.urihttps://hdl.handle.net/1911/72096en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.titleMeasurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopyen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.dcmiTexten_US
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