Sub-quarter micron contact hole fabrication using annular illumination

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dc.citation.conferenceDate1996en_US
dc.citation.conferenceNameSPIE Conference on Optical Microlithography IXen_US
dc.citation.firstpage88en_US
dc.citation.lastpage93en_US
dc.citation.locationSanta Clara, CAen_US
dc.contributor.authorErdelyi, Miklosen_US
dc.contributor.authorBor, Zsolten_US
dc.contributor.authorSzabo, Gaboren_US
dc.contributor.authorCavallaro, Joseph R.en_US
dc.contributor.authorSmayling, Michael C.en_US
dc.contributor.authorTittel, Frank K.en_US
dc.contributor.authorWilson, William L.en_US
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-06-15T21:37:13Zen_US
dc.date.available2012-06-15T21:37:13Zen_US
dc.date.issued1996-03-01en_US
dc.description.abstractDetails of an experimental demonstration of a contact hole imaging system are reported in which the depth of focus is increased by a factor of about 3.5 using annular illumination. Due to spatial filtering and nonlinearity of the photoresist, the resolving power was enhanced by 52% and it was possible to pattern a 0.28 um contact hole in photoresist deposited on a silica substrate. This technique is capable of fabricating sub-quarter micron holes using excimer laser radiation at 193 nm.en_US
dc.description.sponsorshipTexas Instrumentsen_US
dc.description.sponsorshipNational Science Foundationen_US
dc.identifier.citationM. Erdelyi, Z. Bor, G. Szabo, J. R. Cavallaro, M. C. Smayling, F. K. Tittel and W. L. Wilson, "Sub-quarter micron contact hole fabrication using annular illumination," 1996.en_US
dc.identifier.otherhttp://scholar.google.com/scholar?cluster=13023915854796936665&hl=en&as_sdt=0,44en_US
dc.identifier.urihttps://hdl.handle.net/1911/64278en_US
dc.language.isoengen_US
dc.publisherSPIEen_US
dc.titleSub-quarter micron contact hole fabrication using annular illuminationen_US
dc.typeConference paperen_US
dc.type.dcmiTexten_US
dc.type.dcmiTexten_US
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