Polyimide-based field effect transistor structures

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dc.contributor.advisorWilson, William L., Jr.en_US
dc.creatorSteele, Jennifer Marieen_US
dc.date.accessioned2009-06-04T07:56:12Zen_US
dc.date.available2009-06-04T07:56:12Zen_US
dc.date.issued1999en_US
dc.description.abstractBecause of the electrical insulating properties of polyimide, it is widely used in the packaging of semiconductor chips. However, it has been documented that the electrical resistivity can be decreased by several orders of magnitude to about 0.1--1 O-cm when irradiated with ultraviolet laser light. This unique property of polyimide can be exploited to fabricate devices. In this study, capacitor structures on silicon wafers were created using a laser-modified layer of conducting polyimide as the top plate and a still intact layer unmodified polyimide as the insulator. This work quantifies the properties and quality of these capacitor structures and optimizes the procedure for fabricating them. First, the capacitor-insulator transition of thin film polyimide on silicon wafers were characterized and compared to bulk experiments. Then capacitor structures were fabricated and studied. Finally, an unexpected frequency response was discovered originating from the conductivity of the laser-modified polyimide. This frequency response was successfully modeled in PSPICE.en_US
dc.format.extent72 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS E.E. 2000 STEELEen_US
dc.identifier.citationSteele, Jennifer Marie. "Polyimide-based field effect transistor structures." (1999) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/17381">https://hdl.handle.net/1911/17381</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/17381en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectElectronicsen_US
dc.subjectElectrical engineeringen_US
dc.subjectEngineeringen_US
dc.subjectMaterials scienceen_US
dc.titlePolyimide-based field effect transistor structuresen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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