Study of degradation in tunneling oxide thin films in EEPROM and FLASH EEPROM test stuctures

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dc.contributor.advisorWilson, William L., Jr.
dc.creatorChen, Chun
dc.date.accessioned2009-06-04T08:30:21Z
dc.date.available2009-06-04T08:30:21Z
dc.date.issued1997
dc.description.abstractDegradation of the tunneling oxide film in EEPROM and FLASH memory test structures has been studied. Two models have been used to characterize the tunneling induced degradation of the oxide thin film. They are the effective tunneling area model and the effective oxide field model. These two models correspond to the two extreme cases of oxide charge trapping. Our study not only suggested an accelerated reliability test method for the tunneling oxide film, but also provided a description of the oxide charge trapping process during Fowler-Nordheim tunneling. The generation mechanism of the oxide trapped charge is discussed.
dc.format.extent105 p.en_US
dc.format.mimetypeapplication/pdf
dc.identifier.callnoTHESIS E.E. 1997 CHEN
dc.identifier.citationChen, Chun. "Study of degradation in tunneling oxide thin films in EEPROM and FLASH EEPROM test stuctures." (1997) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/17068">https://hdl.handle.net/1911/17068</a>.
dc.identifier.urihttps://hdl.handle.net/1911/17068
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectElectronics
dc.subjectElectrical engineering
dc.subjectCondensed matter physics
dc.subjectEngineering
dc.subjectMaterials science
dc.titleStudy of degradation in tunneling oxide thin films in EEPROM and FLASH EEPROM test stuctures
dc.typeThesis
dc.type.materialText
thesis.degree.departmentElectrical Engineering
thesis.degree.disciplineEngineering
thesis.degree.grantorRice University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science
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