Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

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dc.citation.firstpage171105en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber101en_US
dc.contributor.authorHaugan, H.J.en_US
dc.contributor.authorBrown, G.J.en_US
dc.contributor.authorElhamri, S.en_US
dc.contributor.authorMitchel, W.C.en_US
dc.contributor.authorMahalingam, K.en_US
dc.contributor.authorKim, M.en_US
dc.contributor.authorNoe, G.T.en_US
dc.contributor.authorOgden, N.E.en_US
dc.contributor.authorKono, J.en_US
dc.date.accessioned2013-09-18T17:03:46Zen_US
dc.date.available2013-09-18T17:03:46Zen_US
dc.date.issued2012-10-23en_US
dc.description.abstractWe explore the optimum growth space for a 47.0A ° InAs/21.5A ° Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 5065meV. However, SL quality is sensitive to the growth temperature (Tg). For the SLs grown at 390 470 C, a photoresponse signal gradually increases as Tg increases from 400 to 440 C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of 10 000 V/cm2 and 300K recombination lifetime of 70 ns for an optimized SLen_US
dc.description.sponsorshipAir Force Research Laboratory Agreement No. FA8650-07-5061en_US
dc.identifier.citationH. Haugan, G. Brown, S. Elhamri, W. Mitchel, K. Mahalingam, M. Kim, G. Noe, N. Ogden and J. Kono, "Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection," <i>Applied Physics Letters,</i> vol. 101, 2012.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4764015en_US
dc.identifier.urihttps://hdl.handle.net/1911/72093en_US
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.titleImpact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detectionen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
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