Enhanced VLSI Manufacturability Using an Integrated CAD Framework

dc.citation.conferenceDate1994en_US
dc.citation.conferenceNameNSF Design and Manufacturing Grantees Conferenceen_US
dc.citation.firstpage549
dc.citation.lastpage550
dc.citation.locationBoston, MAen_US
dc.contributor.authorFossati, Humberto M.
dc.contributor.authorTittel, Frank K.
dc.contributor.authorWilson, William L.
dc.contributor.authorCavallaro, Joseph R.
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-06-20T21:12:11Z
dc.date.available2012-06-20T21:12:11Z
dc.date.issued1994-01-01eng
dc.description.abstractContinued improvements in VLSI performance, circuit density and production costs are possible, in part, do to significant advances in lithography. As feature sizes get smaller, design houses are faced with either improving the resolution of their optical lithography lines, or step-up to the cost of newer x-ray based machines. The work at Rice University proposes to integrate design and process-specific CAD tools to provide further use of optical lithography equipment, while reducing feature sizes to improve manufacturability. By integrating photolithography simulators to layout editors, and by providing expert information on the simulated optical and physical resolution of the feature to the designer, compact and smaller circuits can be designated, which are governed by local design rules. This work is complemented by the development of a novel phase shifting technique at Rice based on interferometry which allows for the manufacture of features with high contrast and reduced feature size.en_US
dc.description.sponsorshipNational Science Foundationen_US
dc.identifier.citationH. M. Fossati, F. K. Tittel, W. L. Wilson and J. R. Cavallaro, "Enhanced VLSI Manufacturability Using an Integrated CAD Framework," 1994.
dc.identifier.urihttps://hdl.handle.net/1911/64285
dc.language.isoengen
dc.publisherSME Pressen_US
dc.titleEnhanced VLSI Manufacturability Using an Integrated CAD Frameworken_US
dc.typeConference paperen_US
dc.type.dcmiTexten
dc.type.dcmiTexten_US
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