A New Phase Shifting Method for High Resolution Microlithography

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dc.citation.conferenceDate1994en_US
dc.citation.conferenceNameNSF Design and Manufacturing Grantees Conferenceen_US
dc.citation.firstpage577
dc.citation.lastpage578
dc.citation.locationCambridge, MAen_US
dc.contributor.authorKido, Motoi
dc.contributor.authorCavallaro, Joseph R.
dc.contributor.authorSzabo, Gabor
dc.contributor.authorWilson, William L.
dc.contributor.authorTittel, Frank K.
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-06-21T20:31:42Z
dc.date.available2012-06-21T20:31:42Z
dc.date.issued1994-01-01eng
dc.description.abstractOne of the most promising lithographic technique for the future designs of DRAMs is the phase-shifting mask technique. Conventional phase shifting-masks, however, are difficult to fabricate as they require regions of different optical thickness. We present a new phase shifting technique that does not use any phase shifting materials. A special interferometer and a mask that has both transmitting areas and reflective areas accomplish the required phase-shift at the image plane. Using this technique we have demonstrated phase shifting effects using a CCD camera. We also present the results of a computer simulation for the critical resolution of this new method in comparison with the conventional phase shifting approach.en_US
dc.description.sponsorshipNational Science Foundationen_US
dc.identifier.citationM. Kido, J. R. Cavallaro, G. Szabo, W. L. Wilson and F. K. Tittel, "A New Phase Shifting Method for High Resolution Microlithography," 1994.*
dc.identifier.doihttp://dx.doi.org/10.1117/12.175474en_US
dc.identifier.urihttps://hdl.handle.net/1911/64286
dc.language.isoengen
dc.publisherSME Pressen_US
dc.subjectPhase shifting techniqueen_US
dc.subjectDRAMsen_US
dc.subjectLithographicen_US
dc.subjectCritical resolutionen_US
dc.subjectTransmittingen_US
dc.titleA New Phase Shifting Method for High Resolution Microlithographyen_US
dc.typeConference paperen_US
dc.type.dcmiTexten
dc.type.dcmiTexten_US
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